VCO Diode
JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
www.DataSheet4U.com
JDV2S10S
VCO for UHF Band Radio
• • • High Cap...
Description
JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
www.DataSheet4U.com
JDV2S10S
VCO for UHF Band Radio
High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C0.5V C2.5V C0.5V/C2.5V rs IR = 1 µA VR = 10 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 1 V, f = 470 MHz Test Condition
Weight: 0.0011 g
Min 10 7.3 2.75 2.4
Typ. 2.5 0.35
Max 3 8.4 3.4 0.5
Unit V nA pF Ω
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
F
000707EAA2
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOS...
Similar Datasheet
- JDV2S10FS VCO - Toshiba Semiconductor
- JDV2S10S VCO Diode - Toshiba Semiconductor
- JDV2S10T VCO for UHF Band Radio - Toshiba Semiconductor
- JDV2S13FS VCO Diode - Toshiba Semiconductor
- JDV2S14E Diode - Toshiba Semiconductor
- JDV2S16FS VCO - Toshiba Semiconductor
- JDV2S17S VCO - Toshiba
- JDV2S19S VCO - Toshiba