Preliminary Datasheet
HAT2285WP
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switchin...
Preliminary Datasheet
HAT2285WP
Silicon N Channel Power MOS FET with
Schottky Barrier Diode
High Speed Power Switching
REJ03G1371-0310 Rev.3.10
May 13, 2010
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in
Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D)
5 678
2 G1
4 32 1
78 D1 D1
56 S1/D2 S1/D2
4 G2
S1/D2(kelvin) 1
MOS1
S2 3
MOS2 and
Schottky Barrier Diode
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation
VDSS VGSS
ID ID(pulse)Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1 %
2. Tc = 25°C
MOS1 30 ±20 14 56 14 8 150
–55 to +150
Ratings MOS2 & SBD 30 ±12 22 88 22 15 150 –55 to +150
(Ta = 25°C)
Unit
V V A A A W
°C °C
REJ03G1371-0310 Rev.3.10 May 13, 2010
Page 1 of 9
HAT2285WP
Electrical Characteristics
MOS1
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time...