Silicon N-Channel Power MOSFET
HAT2221C
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V)
•...
Description
HAT2221C
Silicon N Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V)
Low drive current. High density mounting 4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Indexband 6
5
4
3 2 1
REJ03G1240-0400 Rev.4.00
Feb 28, 2006
23 45 DD DD
6 G
S 1
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID ID (pulse)Note1
Body - Drain diode reverse drain current Channel dissipation
IDR PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings 30
+20 / –10 1.5 6 1.5 790 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W °C °C
Rev.4.00 Feb 28, 2006 page 1 of 6
HAT2221C
Electrical Characteristics
Item Drain to Source breakdown voltage Gate to Source breakdown voltage
Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test
Symbol V(BR)DSS V(BR)GSS
IGSS IDSS VGS(off) RDS(on)
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