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HAT2218R
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G0396-0300 Rev.3.00 Aug.23.2004
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
SOP-8
7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6
3 1 2
4
S1/D2(kelvin) 1
S...
