HAT2208R Datasheet PDF - Renesas Technology

HAT2208R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive ...

HAT2208R Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 19.0 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1595-0201 Rev.2.01 Nov.25.2016 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 30 ±20 9 72 9 9 8.1 2.0 62.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C RJE03G1595-0201 Rev.2.01 Nov. 25, 2016 Page 1 of 7 HAT2208R Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.0 Static drain to source on state RDS(on) — resistance RDS(on) — Forward transfer admittance |yfs| 9.5 Input capacitance Ciss — Output capacitance Coss — Reve...