HAT2200WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 22 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678
4
4 321
G
Preliminary Datasheet
REJ03G1678-0311 Rev.3.11
Nov.25.2016
5 678 D DDD
1, 2, ...
