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DATA SHEET
PEMB13; PUMB13 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification Supersedes data of 2003 Dec 11 2004 Apr 15
Philips Semiconductors
www.DataSheet4U.com Product specification
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PEMB13 PUMB13 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING SOT666 SOT363 EIAJ − SC-88 45 B*5 MARKING CODE
PEMB13; PUMB13
QUICK REFERENCE DATA SYMBOL VCEO IO TR1 TR2 R1 R2 PARAMETER collector-emitter voltage output current (DC) PNP PNP bias resistor bias resistor TYP. − − − − 4.7 47 MAX. −50 −100 − − − − UNIT V mA − − kΩ kΩ
NPN/PNP COMPLEMENT PEMD13 PUMD13
NPN/NPN COMPLEMENT PEMH13 PUMH13
PINNING TYPE NUMBER PEMB13 PUMB13
6 5 4
SIMPLIFIED OUTLINE AND SYMBOL PIN
6 5 4
DESCRIPTION emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
1 2 3
R1 TR1 R2
R2 TR2 R1
4 5 6
1
Top view
2
3
1
MAM477
2
3
2004 Apr 15
2
Philips Semiconductors
www.DataSheet4U.com Product specification
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PEMB13 PUMB13 − − DESCRIPTION plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads
PEMB13; PUMB13
VERSION SOT666 SOT363
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. Tamb ≤ 25 °C note 1 notes 1 and 2 − − 300 300 mW mW storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C note 1 notes 1 and 2 − − −65 − −65 200 200 +150 150 +150 mW mW °C °C °C − − − − +5 −30 −100 −100 V V mA mA open emitter open base open collector − − − −50 −50 −10 V V V PARAMETER CONDITIONS MIN. MAX. UNIT
2004 Apr 15
3
Philips Semiconductors
www.DataSheet4U.com Product specification
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Per device Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Notes Tamb ≤ 25 °C note 1 note 1 Tamb ≤ 25 °C note 1 notes 1 and 2 PARAMETER CONDITIONS
PEMB13; PUMB13
VALUE
UNIT
625 625
K/W K/W
416 416
K/W K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz CONDITIONS VCB = −50 V; IE = 0 VCE = −30 V; IB = 0 VCE = −30 V; IB = 0; Tj = 150 °C VEB = −5 V; IC = 0 VCE = −5 V; IC = −10 mA IC = −5 mA; IB = −0.25 mA VCE = −5 V; IC = −100 µA VCE = −0.3 V; IC = −5 mA MIN. − − − − 100 − − −1.3 3.3 8 − TYP. − − − − − − −0.6 −0.9 4.7 10 − MAX. −100 −1 −50 −170 − −100 −0.5 − 6.1 12 3 pF mV V V kΩ UNIT nA µA µA µA
2004 Apr 15
4
Philips Semiconductors
www.DataSheet4U.com Product specification
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PACKAGE OUTLINES
Plastic surface mounted package; 6 leads
PEMB13; PUMB13
SOT666
D
A
E
X
S
Y S HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
w M A Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2004 Apr 15
5
Philips Semiconductors
www.DataSheet4U.com Product specification
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PEMB13; PUMB13
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
HE
v M A
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm .