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PUMB13 Dataheets PDF



Part Number PUMB13
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description PNP/PNP resistor-equipped transistors
Datasheet PUMB13 DatasheetPUMB13 Datasheet (PDF)

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET PEMB13; PUMB13 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Dec 11 2004 Apr 15 Philips Semiconductors www.DataSheet4U.com Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET PEMB13; PUMB13 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Dec 11 2004 Apr 15 Philips Semiconductors www.DataSheet4U.com Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PEMB13 PUMB13 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING SOT666 SOT363 EIAJ − SC-88 45 B*5 MARKING CODE PEMB13; PUMB13 QUICK REFERENCE DATA SYMBOL VCEO IO TR1 TR2 R1 R2 PARAMETER collector-emitter voltage output current (DC) PNP PNP bias resistor bias resistor TYP. − − − − 4.7 47 MAX. −50 −100 − − − − UNIT V mA − − kΩ kΩ NPN/PNP COMPLEMENT PEMD13 PUMD13 NPN/NPN COMPLEMENT PEMH13 PUMH13 PINNING TYPE NUMBER PEMB13 PUMB13 6 5 4 SIMPLIFIED OUTLINE AND SYMBOL PIN 6 5 4 DESCRIPTION emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 R1 TR1 R2 R2 TR2 R1 4 5 6 1 Top view 2 3 1 MAM477 2 3 2004 Apr 15 2 Philips Semiconductors www.DataSheet4U.com Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PEMB13 PUMB13 − − DESCRIPTION plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads PEMB13; PUMB13 VERSION SOT666 SOT363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. Tamb ≤ 25 °C note 1 notes 1 and 2 − − 300 300 mW mW storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C note 1 notes 1 and 2 − − −65 − −65 200 200 +150 150 +150 mW mW °C °C °C − − − − +5 −30 −100 −100 V V mA mA open emitter open base open collector − − − −50 −50 −10 V V V PARAMETER CONDITIONS MIN. MAX. UNIT 2004 Apr 15 3 Philips Semiconductors www.DataSheet4U.com Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Per device Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Notes Tamb ≤ 25 °C note 1 note 1 Tamb ≤ 25 °C note 1 notes 1 and 2 PARAMETER CONDITIONS PEMB13; PUMB13 VALUE UNIT 625 625 K/W K/W 416 416 K/W K/W 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz CONDITIONS VCB = −50 V; IE = 0 VCE = −30 V; IB = 0 VCE = −30 V; IB = 0; Tj = 150 °C VEB = −5 V; IC = 0 VCE = −5 V; IC = −10 mA IC = −5 mA; IB = −0.25 mA VCE = −5 V; IC = −100 µA VCE = −0.3 V; IC = −5 mA MIN. − − − − 100 − − −1.3 3.3 8 − TYP. − − − − − − −0.6 −0.9 4.7 10 − MAX. −100 −1 −50 −170 − −100 −0.5 − 6.1 12 3 pF mV V V kΩ UNIT nA µA µA µA 2004 Apr 15 4 Philips Semiconductors www.DataSheet4U.com Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ PACKAGE OUTLINES Plastic surface mounted package; 6 leads PEMB13; PUMB13 SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 w M A Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2004 Apr 15 5 Philips Semiconductors www.DataSheet4U.com Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ PEMB13; PUMB13 Plastic surface mounted package; 6 leads SOT363 D B E A X y HE v M A 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm .


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