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PESD1LIN Dataheets PDF



Part Number PESD1LIN
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description LIN bus ESD protection diode
Datasheet PESD1LIN DatasheetPESD1LIN Datasheet (PDF)

PESD1LIN LIN bus ESD protection diode Rev. 02 — 12 November 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect Network (LIN) bus line from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features I ESD protection of one automotive LIN bus line I Asymmetrical diode configuration ensures an opti.

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PESD1LIN LIN bus ESD protection diode Rev. 02 — 12 November 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect Network (LIN) bus line from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features I ESD protection of one automotive LIN bus line I Asymmetrical diode configuration ensures an optimized ElectroMagnetic Immunity (EMI) of a LIN Electronic Control Unit (ECU) I Due to the integrated diode structure only one very small SOD323 package is needed I Max. peak pulse power: PPP = 160 W at tp = 8/20 µs I Low clamping voltage: VCL = 40 V at IPP = 1 A I Ultra low leakage current: IRM < 1 nA I ESD protection of up to 23 kV I IEC 61000-4-2, level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs 1.3 Applications I LIN bus protection I Automotive applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD1LIN (15 V) PESD1LIN (24 V) Cd diode capacitance VR = 0 V; f = 1 MHz 13 15 24 17 V V pF Conditions Min Typ Max Unit NXP Semiconductors www.DataSheet4U.com PESD1LIN LIN bus ESD protection diode 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode 1 (15 V) cathode 2 (24 V) 1 2 1 2 006aab041 Simplified outline Graphic symbol 3. Ordering information Table 3. Ordering information Package Name PESD1LIN SC-76 Description plastic surface-mounted package; 2 leads Version SOD323 Type number 4. Marking Table 4. PESD1LIN Marking codes Marking code AM Type number 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP IPP Tj Tamb Tstg [1] Parameter peak pulse power peak pulse current junction temperature ambient temperature storage temperature Conditions tp = 8/20 µs tp = 8/20 µs [1] [1] Min −65 −65 Max 160 3 150 +150 +150 Unit W A °C °C °C Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. PESD1LIN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 12 November 2008 2 of 11 NXP Semiconductors www.DataSheet4U.com PESD1LIN LIN bus ESD protection diode Table 6. Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] Min - Max 23 10 Unit kV kV [1] Device stressed with ten non-repetitive ESD pulses. Table 7. Standard ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 001aaa631 120 IPP (%) 80 100 % IPP; 8 µs 001aaa630 IPP 100 % 90 % e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (µs) 40 30 ns 60 ns t 0 Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD1LIN_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 12 November 2008 3 of 11 NXP Semiconductors www.DataSheet4U.com PESD1LIN LIN bus ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD1LIN (15 V) PESD1LIN (24 V) IRM reverse leakage current PESD1LIN (15 V) PESD1LIN (24 V) VBR breakdown voltage PESD1LIN (15 V) PESD1LIN (24 V) Cd VCL diode capacitance clamping voltage PESD1LIN (15 V) PESD1LIN (24 V) rdif differential resistance PESD1LIN (15 V) PESD1LIN (24 V) [1] Conditions Min - Typ <1 <1 18.9 27.8 13 - Max 15 24 50 50 20.3 30.3 17 25 44 40 70 225 300 Unit V V nA nA V V pF V V V V Ω Ω VRWM = 15 V VRWM = 24 V IR = 5 mA 17.1 25.4 VR = 0 V; f = 1 MHz [1] - IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A IR = 1 mA IR = 1 mA Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. 104 PPP (W) 103 006aaa164 1.2 PPP PPP(25°C) 0.8 001aaa193 102 0.4 10 1 10 102 103 t p (µs) 104 0 0 50 100 150 Tj (°C) 200 Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values © NXP B.V. 2008. All rights reserved. PESD1LIN_2 Product data sheet Rev. 02 — 12 November 2008 4 of 11 NXP Semiconductors www.DataSheet4U.com PESD1LIN LIN bus ESD protection diode ESD TESTER RZ CZ D.U.T. (Device Under Test) 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD1LIN (24V) GND PESD1LIN (15V) GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND PESD1LIN (15V) GND .


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