K4S51323PF-MF

K4S51323PF-M(E)F 4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). 2Chips DDP 90Balls FBGA( -MXXX -Pb, -EXXX -Pb Free). Mobile-SDRAM www.DataSheet4U.com GENERAL DESCRIPTION The K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S51323PF-M(E)F75 K4S51323PF-M(E)F90 K4S51323PF-M(E)F1L Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3),83MHz(CL=2) 111MHz(C...