Standard Power MOSFET
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH50P10 IXTT50P10
VDSS =
ID25 = ≤ RDS(on)
- 100V -...
Description
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH50P10 IXTT50P10
VDSS =
ID25 = ≤ RDS(on)
- 100V - 50A
55mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
-100
V
-100
V
±20
V
±30
V
- 50
A
- 200
A
- 50
A
30
mJ
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
5
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250 μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = 0.8 VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
-100
V
- 3.0
- 5.0 V
±100 nA
- 25 μA -1 mA
55 mΩ
G D S
TO-268 (IXTT)
(TAB)
G S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z International standard packages JEDEC TO-247 AD
z Low RDS(ON) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance (< 5nH)
- easy to drive and to protect
Applications
z High side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment
Advantages
z Easy to mount with 1 screw (isolated moun...
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