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APTGT50H120T3G

Microsemi Corporation

Power-Module IGBT

APTGT50H120T3G Full - Bridge Fast Trench + Field Stop IGBT® Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 5...


Microsemi Corporation

APTGT50H120T3G

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Description
APTGT50H120T3G Full - Bridge Fast Trench + Field Stop IGBT® Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Max ratings 1200 75 50 100 ±20 270 100A @ 1150V Unit V July, 2006 1-5 APTGT50H120T3G – Rev 1 Q1 18 19 CR1 CR3 Q3 11 10 22 23 Q2 7 8 CR4 Q4 26 27 CR2 4 3 29 15 30 31 R1 32 16 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector ...




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