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APTGT50DH170T

Advanced Power Technology

Power-Module IGBT

APTGT50DH170T Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.co...


Advanced Power Technology

APTGT50DH170T

File Download Download APTGT50DH170T Datasheet


Description
APTGT50DH170T Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1700V IC = 50A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS SENSE NT C1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 100A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT web...




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