Power-Module IGBT
APTGT50DH120TG
Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module
VBUS VBUS SENSE Q1 G1 CR3
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Description
APTGT50DH120TG
Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module
VBUS VBUS SENSE Q1 G1 CR3
www.DataSheet4U.com
VCES = 1200V IC = 50A @ Tc = 80°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant
E1 OUT1 OUT2 Q4 G4 CR2 E4
0/VBUS SENSE
NT C1
0/VBUS
NT C2
VBUS SENSE
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Max ratings 1200 75 50 100 ±20 277 100A @ 1150V
Unit V
July, 2006 1-5 APTGT50DH120TG – Rev 1
A V W
Reverse Bias Safe Operating ...
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