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APTGT50DH120TG

Microsemi Corporation

Power-Module IGBT

APTGT50DH120TG Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataShee...


Microsemi Corporation

APTGT50DH120TG

File Download Download APTGT50DH120TG Datasheet


Description
APTGT50DH120TG Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS SENSE NT C1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1200 75 50 100 ±20 277 100A @ 1150V Unit V July, 2006 1-5 APTGT50DH120TG – Rev 1 A V W Reverse Bias Safe Operating ...




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