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APTGT50DH120T3G

Microsemi Corporation

Power-Module IGBT

APTGT50DH120T3G Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200...


Microsemi Corporation

APTGT50DH120T3G

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Description
APTGT50DH120T3G Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Fast Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration Q1 CR1 18 CR3 22 19 23 7 8 Q4 CR2 CR4 4 3 29 15 30 31 32 16 R1 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 277 100A @ 1150V Unit V A V W Ap...




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