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APTGT75H120TG

Microsemi Corporation

Power-Module IGBT

APTGT75H120TG Full - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 Q3 www.DataSheet4U.com VCES = 1200V IC...


Microsemi Corporation

APTGT75H120TG

File Download Download APTGT75H120TG Datasheet


Description
APTGT75H120TG Full - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 Q3 www.DataSheet4U.com VCES = 1200V IC = 75A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 G3 E1 Q2 OUT1 OUT2 Q4 E3 G2 G4 E2 NTC1 NTC2 E4 0/VBU S Features Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant G3 E3 G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.mic...




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