N-Channel IGBT
Preliminary
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RJP4007ANS
Nch IGBT for Strobe Flash
REJ03G1866-0100 Rev.1.00 Dec 08, 2009
Features
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Description
Preliminary
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RJP4007ANS
Nch IGBT for Strobe Flash
REJ03G1866-0100 Rev.1.00 Dec 08, 2009
Features
Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A Drive voltage: 2.5 V to 6 V (MAX)
Outline
RENESAS Package code: PVSN0008JA-A (Package name: VSON-8) 5 8 4 1 1 2 3 4 8 7 6 5 1, 2, 3 : Emitter 4 : Gate 5, 6, 7, 8 : Collector
Applications
Strobe flash for cameras
Maximum Ratings
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES ICM Tj Tstg Ratings 400 ±6 150 –40 to +150 –40 to +150 Unit V V A °C °C Conditions VGE = 0 V VCE = 0 V CM = 200 μF (see performance curve)
REJ03G1866-0100 Rev.1.00 Dec 08, 2009 Page 1 of 4
RJP4007ANS
Preliminary
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Electrical Characteristics
Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol ICES IGES VGE(th) VCE(sat) Cies Min. — — 0.4 — — Typ. — — 0.6 4.5 4000 Max. 1 ±10 1.2 9.0 — Unit μA μA V V pF
(Tj = 25°C)
Test conditions VCE = 400 V, VGE = 0 V VGE = ±6 V, VCS = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 2.5 V VCE = 25 V, VGE = 10 V, f = 1 MHz
Performance Curves
Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Circuit)
200
Pulse Collector Current ICM (A)
150
TC = 70°C CM = 200 μF RG = 30 Ω
100
50
0 0 1 2 3 4 5 6 7
Gate - Emitter Voltage ...
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