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HYB39S16160AT-8

Siemens Semiconductor

16 MBit Synchronous DRAM


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www.DataSheet4U.com 16 MBit Synchronous DRAM (second generation) Advanced Information High Performance: CAS latency = 3 -8 125 8 7 -10 100 10 8 Units MHz ns ns HYB 39S16400/800/160AT-8/-10 Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read/Write control (× 4, × 8) Dual Data Mask for byte...



Siemens Semiconductor

HYB39S16160AT-8

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