IGBT
SEMiX151GB12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si • Trench = Trenchgate technolog...
Description
SEMiX151GB12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient High short circuit capability UL recognized, file no. E63532
Typical Applications*
AC inverter drives UPS Electronic Welding
Remarks
Case temperature limited to TC=125°C max.
Product reliability results are valid for Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1 RG off = 1
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 3900 A/µs Tj = 150 °C di/dtoff = 2000 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200 232 179 150 450 -20 ... 20
10
-40 ... 175
189 141 150 450...
Similar Datasheet
- SEMIX151GB12E4S IGBT - Semikron International