NTUD3170NZ

NTUD3170NZ MOSFET – Dual, N-Channel, Small Signal, SOT-963, 1.0 mm x 1.0 mm 20 V, 220 mA Features Dual N−Channel MOSFET Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics This is a Pb−Free Device Applications General Purpose Interfacing Switch Optimized for Power Management in Ultra Portable Equipment Analog Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) tv5s Steady State tv5s TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID TA = 25°C PD 20 V ±8 V 220 160 mA 280 125 mW 200 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL 800 mA −55 to °C 150 200 mA 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% www.onsemi.com V(BR)DSS 20 V RDS(ON) MAX 1.5 W @ 4.5 V 2.0 W @ 2.5 V 3.0 W @ ...