NTUD3129P

NTUD3129P Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package Features ăDual P-Channel MOSFET ăOffers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm Package ă1.5V Gate Voltage Rating ăUltra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. ăThese are Pb-Free Devices Applications ăGeneral Purpose Interfacing Switch ăOptimized for Power Management in Ultra Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) tv5s Steady State tv5s TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID TA = 25°C PD -20 V ±8 V -140 -100 mA -180 -125 mW -200 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL -600 mA -55 to °C 150 -200 mA 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% http://onsemi.co...