NTUD3127C

NTUD3127C Small Signal MOSFET 20 V, 200 mA / −180 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package Features Complementary MOSFET Device 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. These are Pb−Free Devices Applications Load Switch with Level Shift Optimized for Power Management in Ultra Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) Steady State tv5s P−Channel Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID TA = 25°C PD 20 V ±8 V 160 115 200 mA −140 −100 −180 125 mW 200 Pulsed Drain Current N−Channel P−Channel tp = 10 ms IDM 800 mA −600 Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TJ, TSTG IS TL −55 to °C 150 200 mA 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, ...