Document
Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 80 °C Tcase = 80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C
Values
1200 1200 75 / 45 140 / 90 ± 20 350 / 125 / 125 – 40 . . .+150 (125) 2 500 Class F 55/150/56 D1-6 9) 600 1800 D7 15 30 200 200 D8 30 60 350 600 V V A A V W °C V
SEMITRANS® M IGBT Modules Units www.DataSheet4U.com SKD 75 GAL 123 D Input bridge B6U with brake chopper
Preliminary Data
A A A A2s
7D-Pack = 7 Diodes Pack
Characteristics
Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres td(on) tr td(off) tf Eon Eoff Conditions 1) VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 50 A VGE = 15 V; IC = 75 A Tj = 25 (125) °C VCE = 20 V, IC = 25 A per IGBT min. typ. max. – 6,5 1 – 200 3(3,7) – – 350 4300 650 300 100 100 500 100 – – 2,5 – 1,2 70 – – 2,5 – 1,2 44 – – Units V V mA mA nA V V S pF pF pF pF ns ns ns ns mWs mWs V V V mΩ A µC V V V mΩ A µC °C/W °C/W °C/W ≥ VCES – 4,5 5,5 – 0,8 – 3,5 – – – 2,5(3,1) – 3(3,8) 40 – – – – – – – – – – – – – – – – – – – – – – – – – – 3300 500 220 44 56 380 70 8 5 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,0 (1,8) 2,3 (2,1) – 25 19(25) 1,5(4,5) – – –
SKD 75 GAL Features • Round main terminals (2 mm∅) • Easy drilling of PCB • Input diodes glass passivated • 1400 V PIV, good for 500 VAC • High I2t rating (inrush current) • IGBT is latch-up free, homogeneous silicon-structure • High short circuit capability, self limiting to 6 * Icnom • Fast & soft CAL diodes8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large clearance (9 mm) and creepage distances (13 mm). Typical Applications: Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D
1) 2) 3) 8) 9)
VGE = 0 VCE = 25 V f = 1 MHz
VCC = 600 V VGE = + 15 V / - 15 V 3) IC = 50 A, ind. load RGon = RGoff = 22 Ω Tj = 125 °C
Inverse Diode D78) of brake chopper VF = VEC IF = 15 A VGE = 0 V; VF = VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 15 A; Tj = 25 (125) °C2) Qrr IF = 15 A; Tj = 25 (125) °C2) FWD D8 of "GAL" brake chopper 8) VF = VEC IF = 25 A VGE = 0 V; VF = VEC IF = 40 A Tj = 25 (125) °C VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 25 A; Tj = 25 (125) °C2) Qrr IF = 25 A; Tj = 25 (125) °C2) Thermal Characteristics per IGBT / diode D1..6 9) Rthjc per diode D7 / D8 Rthjc Rthch per module
0,35 / 1,0 1,5 / 1,0 0,05
Tcase = 25 °C, unless otherwise specified IF = – IC, VR = 600 V, – diF/dt = 500 A/µs, VGE = 0 V Use VGEoff = -5 ... - 15 V CAL = Controlled Axial Lifetime Technology. Data D1 - D6, case and mech. data → B6 - 130
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0996
B 6 – 125
SKD 75 GAL 123 D ...
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