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SKD75GAL123D Dataheets PDF



Part Number SKD75GAL123D
Manufacturers Semikron
Logo Semikron
Description Igbt Modules
Datasheet SKD75GAL123D DatasheetSKD75GAL123D Datasheet (PDF)

Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 80 °C Tcase = 80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values 1200 1200 75 / 45 140 / 90 ± 20 350 / 125 / 125 – 40 . . .+150 (125) 2 500 Class F 55/150/56 D1-6 9) 600 1800 D7 15 30 200 200 D8 30 60 3.

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Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 80 °C Tcase = 80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values 1200 1200 75 / 45 140 / 90 ± 20 350 / 125 / 125 – 40 . . .+150 (125) 2 500 Class F 55/150/56 D1-6 9) 600 1800 D7 15 30 200 200 D8 30 60 350 600 V V A A V W °C V SEMITRANS® M IGBT Modules Units www.DataSheet4U.com SKD 75 GAL 123 D Input bridge B6U with brake chopper Preliminary Data A A A A2s 7D-Pack = 7 Diodes Pack Characteristics Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres td(on) tr td(off) tf Eon Eoff Conditions 1) VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA  Tj = 25 °C VGE = 0  VCE = VCES  Tj = 125 °C VGE = 20 V, VCE = 0  IC = 50 A  VGE = 15 V;   IC = 75 A  Tj = 25 (125) °C VCE = 20 V, IC = 25 A per IGBT min. typ. max. – 6,5 1 – 200 3(3,7) – – 350 4300 650 300 100 100 500 100 – – 2,5 – 1,2 70 – – 2,5 – 1,2 44 – – Units V V mA mA nA V V S pF pF pF pF ns ns ns ns mWs mWs V V V mΩ A µC V V V mΩ A µC °C/W °C/W °C/W ≥ VCES – 4,5 5,5 – 0,8 – 3,5 – – – 2,5(3,1) – 3(3,8) 40 – – – – – – – – – – – – – – – – – – – – – – – – – – 3300 500 220 44 56 380 70 8 5 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,0 (1,8) 2,3 (2,1) – 25 19(25) 1,5(4,5) – – – SKD 75 GAL Features • Round main terminals (2 mm∅) • Easy drilling of PCB • Input diodes glass passivated • 1400 V PIV, good for 500 VAC • High I2t rating (inrush current) • IGBT is latch-up free, homogeneous silicon-structure • High short circuit capability, self limiting to 6 * Icnom • Fast & soft CAL diodes8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large clearance (9 mm) and creepage distances (13 mm). Typical Applications: Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D 1) 2) 3) 8) 9)  VGE = 0  VCE = 25 V  f = 1 MHz        VCC = 600 V VGE = + 15 V / - 15 V 3) IC = 50 A, ind. load RGon = RGoff = 22 Ω Tj = 125 °C Inverse Diode D78) of brake chopper  VF = VEC IF = 15 A  VGE = 0 V;  VF = VEC IF = 25 A   Tj = 25 (125) °C  VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 15 A; Tj = 25 (125) °C2) Qrr IF = 15 A; Tj = 25 (125) °C2) FWD D8 of "GAL" brake chopper 8) VF = VEC IF = 25 A  VGE = 0 V;   VF = VEC IF = 40 A   Tj = 25 (125) °C  VTO Tj = 125 °C Tj = 125 °C rT IRRM IF = 25 A; Tj = 25 (125) °C2) Qrr IF = 25 A; Tj = 25 (125) °C2) Thermal Characteristics per IGBT / diode D1..6 9) Rthjc per diode D7 / D8 Rthjc Rthch per module 0,35 / 1,0 1,5 / 1,0 0,05 Tcase = 25 °C, unless otherwise specified IF = – IC, VR = 600 V, – diF/dt = 500 A/µs, VGE = 0 V Use VGEoff = -5 ... - 15 V CAL = Controlled Axial Lifetime Technology. Data D1 - D6, case and mech. data → B6 - 130 © by SEMIKRON 0996 B 6 – 125 SKD 75 GAL 123 D ... www.DataShee.


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