PJ6680

www.DataSheet4U.com PJ6680 25V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@12A=10mΩ RDS(ON), [email protected],IDS@10A=18mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request SOIC-08 MECHANICALDATA Case: SOIC-08 Package Terminals : Solderable per MIL-STD-750D,Method 1036.3 Marking : 6680 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJA Li mi t 25 +20 12 50 2 .5 1 .5 -5 5 to + 1 5 0 180 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL....