STB772

www.DataSheet4U.com Semiconductor STB772 PNP Silicon Transistor Description Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STD882 Switching Application Ordering Information Type NO. STB772 Marking STB772 Package Code MPT Outline Dimensions unit : mm 6.5±0.2 21.5±1.0 1.1±0.1 1.2 Max. 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 5.0±0.2 3.4±0.2 2.0±0.1 0.5±0.2 12.5 Min. 8.5±0.2 PIN Connections 1. Emitter 2. Collector 3. Base KST-B015-001 1 www.DataSheet4U.com STB772 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -15 -12 -5 -5 1.2 150 -55~150 Unit V V V A W °C °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat1) VBE(sat) fT Cob Test Condition IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-3A IC=-3A, IB=-150mA IC=-3A, IB=-150mA VCB=-5V, IC=-500mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. ...