Part Number
|
K4S56323LF-FHE |
Manufacturer
|
Samsung semiconductor |
Description
|
2M x 32Bit x 4 Banks Mobile SDRAM |
Features
|
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address ke...
|
Published
|
Apr 4, 2010 |
Datasheet
|
K4S56323LF-FHE PDF File
|
Features
• VDD/VDDQ = 2.5V/2.5V
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
• EMRS c...
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