N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Advance AdvanceTechnical TechnicalInformation Information
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PolarHVTM Power MOSFET
N-Channel Enhancem...
Description
Advance AdvanceTechnical TechnicalInformation Information
www.DataSheet4U.com
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS
VDSS ID25
= = RDS(on) ≤ ≤ trr
TO-247 (IXFH)
600 V 26 A 270 mΩ 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 26 65 26 40 1.2 10 V V V V A A A mJ J V/ns
G D
G
D
TO-3P (IXFQ)
S
S
D (TAB)
TO-268 (IXFT)
G
S
D (TAB)
PLUS220 (IXFV) 460 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C
G
D
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-248 TO-268 PLUS220 & PLUS220SMD
300 250
PLUS220SMD (IXFV_S)
1.13/10 Nm/lb.in. 11..65/2.5..15 5.5 6.0 5.0 4.0 N/lb g g g g
G S G = Gate S = Source D (TAB) D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 2.5 5.0 ±100 25 250 270 V V nA µA µA mΩ
Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z...
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