PolarHV HiPerFET Power MOSFET
www.DataSheet4U.com
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IX...
Description
www.DataSheet4U.com
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
VDSS
ID25
RDS(on) trr
= = ≤ ≤
600 V 18 A 400 mΩ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 600 600 ±30 ±40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C
TO-247 AD (IXFH)
D (TAB)
PLUS220 (IXFV)
G D S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247)
300 260
1.13/10 Nm/lb.in. 6 4 g g
G = Gate S = Source
G S D (TAB)
TO-247 PLUS220 & PLUS220SMD
D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 2.5 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±100 25 250 400 V V
Features
l l
l
nA μA μA mΩ
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Easy to mount Space savings Hi...
Similar Datasheet