IXTQ52N30P

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings 300 V 300 V  20 V  30 V 52 A 150 A 52 A 1 J 10 V/ns 400 W -55 ... +150 150 -55 ... +150 300 260  C  C  C °C °C 1.13 / 10 4.0 5.5 Nm/lb.in g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 300 V 2.5 5.0 V           100 nA 25 A 250 A 73 m VDSS = ID25 = RDS(on)  300V 52A 73m TO-268 (IXTT) G S D (Tab) TO-3P (IXTQ) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls © 2013 IXYS CORPORATIO...