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SSD01L60 Dataheets PDF



Part Number SSD01L60
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description N-Channel MOSFET
Datasheet SSD01L60 DatasheetSSD01L60 Datasheet (PDF)

SSD01L60 Elektronische Bauelemente www.DataSheet4U.com 1A, 600V,RDS(ON)12£[ N-Channel Enhancement Mode Power Mos.FET Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features * RoHs Compliant * Simple Drive Requirement * Fast Switching Speed * Repetitive Avalanche Rated D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 .

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SSD01L60 Elektronische Bauelemente www.DataSheet4U.com 1A, 600V,RDS(ON)12£[ N-Channel Enhancement Mode Power Mos.FET Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features * RoHs Compliant * Simple Drive Requirement * Fast Switching Speed * Repetitive Avalanche Rated D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol V DS V GS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 600 ±30 1 0.8 3 29 0.232 Unit V V A A A W W/ C o Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range 2 EAS I AR EAR Tj, Tstg 0.5 1 0.5 -55~+150 mJ A mJ o C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ Symbol Max. Max. Rthj-c Rthj-a Ratings 4.3 110 o o Unit C /W C /W Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSD01L60 Elektronische Bauelemente www.DataSheet4U.com 1A, 600V,RDS(ON)12£[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 3 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS RD S (O N ) Gfs Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Min. 600 _ Typ. _ Max. _ Unit V V/ C V nA uA uA £[ o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 30V VDS=60 0V,VGS=0 VDS=480 V,VGS=0 VGS=10V, ID=0.5A VDS=10V, ID=0.5A ID=1 A VDS=480V VGS= 10V o 0.8 _ _ _ _ _ _ 2.0 _ _ _ _ 4.0 ±100 10 100 12 _ _ _ _ Forward Transconductance Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance _ _ _ _ _ _ _ _ _ _ _ 0.8 4 1 1.1 6.6 5 11.7 9.2 170 30.7 5.1 S nC _ _ _ _ _ _ _ VDD=300V ID=1 A nS VGS=10V RG=3.3£[ RD=300 £[ pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 3 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD IS Min. _ _ Typ. _ _ _ Max. 1.2 Unit V A A Test Condition IS=1A, VGS=0V.Tj=25C VD=VG=0V,VS=1.2 V o 1 5 ISM _ Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.0A. 3. Pu.


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