Document
SSD01L60
Elektronische Bauelemente
www.DataSheet4U.com
1A, 600V,RDS(ON)12£[ N-Channel Enhancement Mode Power Mos.FET
Description
TO-252
The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
Features
* RoHs Compliant
* Simple Drive Requirement * Fast Switching Speed * Repetitive Avalanche Rated
D
REF. A B C D E F S
G
S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current
1
Symbol
V DS V GS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C
o o o
Ratings
600
±30 1 0.8 3 29 0.232
Unit
V V A A A W
W/ C
o
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
2
EAS I AR EAR Tj, Tstg
0.5 1 0.5 -55~+150
mJ A mJ
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
Symbol Max. Max.
Rthj-c Rthj-a
Ratings
4.3 110
o o
Unit
C /W C /W
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSD01L60
Elektronische Bauelemente
www.DataSheet4U.com
1A, 600V,RDS(ON)12£[ N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance
3
o o
o
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS RD S (O N ) Gfs Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss
Min.
600
_
Typ.
_
Max.
_
Unit
V V/ C V nA uA uA
£[
o
Test Condition
VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=± 30V VDS=60 0V,VGS=0 VDS=480 V,VGS=0 VGS=10V, ID=0.5A VDS=10V, ID=0.5A ID=1 A VDS=480V VGS= 10V
o
0.8
_ _ _ _ _
_
2.0
_ _ _ _
4.0
±100
10 100 12
_
_ _ _
Forward Transconductance Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
_
_ _ _ _ _ _ _ _ _ _
0.8 4 1 1.1 6.6 5 11.7 9.2 170 30.7 5.1
S
nC
_
_ _ _ _ _ _
VDD=300V ID=1 A nS VGS=10V RG=3.3£[ RD=300 £[
pF
VGS=0V VDS=25V f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 3 Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
Symbol
VSD IS
Min.
_ _
Typ.
_ _ _
Max.
1.2
Unit
V A A
Test Condition
IS=1A, VGS=0V.Tj=25C VD=VG=0V,VS=1.2 V
o
1
5
ISM
_
Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.0A. 3. Pu.