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PD-96971
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A
IRHMB57260SE 200V, N-CHANNEL
5 TECHNOLOGY
Low-Ohmic TO-254AA
International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 45 29 180 208 1.67 ±20 256 45 20.8 19.8 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
300 (0.063 in.(1.6 mm from case for 10s)) 8.0 (Typical)
g
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IRHMB57260SE
Pre-Irradiation
Min
200 — — 2.5 35 — — — — — — — — — — — —
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
— 0.25 — — — — — — — — — — — — — — 6.8 — — 0.044 4.5 — 10 25 100 -100 165 45 75 35 125 80 50 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 29A Ã VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 29A Ã VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 100V VDD = 100V, ID = 45A VGS =12V, RG = 2.35Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
— — — —
5295 900 37 1.47
— — — —
pF Ω
VGS = 0V, VDS = 25V f = 1.0MHz f = 0.89MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
— — — — — — — — — — 45 180 1.2 450 6.9
Test Conditions
A
V ns µC Tj = 25°C, IS = 45A, VGS = 0V Ã Tj = 25°C, IF = 45A, di/dt ≤100A/µs VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
— — — — 0.60 0.21 — — 48 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMB57260SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Res.