Document
APTGF50A120TG
Phase leg NPT IGBT Power Module
VBUS NTC2
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VCES = 1200V IC = 50A @ Tc = 80°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 1200 75 50 150 ±20 312 100A @ 1200V Unit V
July, 2006 1-6 APTGF50A120TG – Rev 2
Q1 G1
E1 O UT Q2 G2
E2
0/VBUS
NTC1
G2 E2
OUT
VBUS
0/VBUS
OUT
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C
A V W
Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF50A120TG
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 3.7 6.5 100 Unit µA V V nA
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3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω
Min
Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 6.9
Max
Unit pF
nC
ns
ns
mJ 3.05
Reverse diode ratings and characteristics
Sym.