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APTGF150H120G

Microsemi Corporation

Full - Bridge NPT IGBT Power Module

APTGF150H120G Full - Bridge NPT IGBT Power Module VBUS Q1 G1 Q3 G3 www.DataSheet4U.com VCES = 1200V IC = 150A @ Tc = 8...


Microsemi Corporation

APTGF150H120G

File Download Download APTGF150H120G Datasheet


Description
APTGF150H120G Full - Bridge NPT IGBT Power Module VBUS Q1 G1 Q3 G3 www.DataSheet4U.com VCES = 1200V IC = 150A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Max ratings 1200 200 150 300 ±20 961 300A @ 1200V Unit V A July, 2006 1-5 APTGF150H120G – Rev 2 E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note A...




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