APT50GT60BRDQ1

TYPICAL PERFORMANCE CURVES ® APT50GT60BRDQ1 www.DataSheet4U.com APT50GT60BRDQ1G* APT50GT60BRDQ1(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Low Tail Current RBSOA and SCSOA Rated High Freq. Switching to 100KHz Ultra Low Leakage Current G TO -2 47 C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT50GT60BRDQ1(G) UNIT Volts 600 ±30 @ TC = 25°C 110 52 150 150A @ 600V 446 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 600 3 1.7 4 2.0 2.2 25 2 5 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Curren...