APT30GS60BRDL

APT30GS60BRDL(G) www.DataSheet4U.com 600V, 30A, V CE(ON) = 2.8V Typical Resonant Mode Combi IGBT® The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode. G C TO -24 7 Single die IGBT with separate DL C E G E Features Fast Switching with low EMI Very Low EOFF for Maximum Efficiency Short circuit rated Low Gate Charge RoHS Compliant Tight parameter distribution Easy paralleling Low Forward Diode Voltage (VF) Ultrasoft Recovery Diode Typical Applications ZVS Phase Shifted Bridge Resonant Mode Switching Phase Shifted Bridge Welding Induction heating High Frequency SMPS Absolute Maximum Ratings Symbol I C1 I C2 I CM VGE SSOA tSC Parameter Continuous Collector Current TC = @ ...