APT30GN60SDQ2

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2 APT30GN60BD_SDQ2(G) APT30GN60SDQ2 APT30GN60BDQ2(G) APT30GN60SDQ2(G) www.DataSheet4U.com 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 47 D3PAK (S) C G E 600V Field Stop Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated G C E C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT30GN60BD_SDQ2(G) UNIT Volts 600 ±30 63 37 90 90A @ 600V 203 -55 to 175 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltag...