APT100GT120JRDL

1200V APT100GT120JRDL www.DataSheet4U.com Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Features Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff Low forward Diode Voltage (VF) Ultrasoft Recovery Diode SSOA Rated RoHS Compliant Typical Applications Induction Heating ISOTOP ® E G C E S OT 22 7 "UL Recognized" file # E145592 Welding Medical High Power Telecom G C Resonant Mode Phase Shifted Bridge E Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT100GT120JRDL 1200 ±20 123 67 200 200A @ 1200V 570 -55 to 150 300 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Col...