IXTK180N15

Advance Technical Information www.DataSheet4U.com High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 180N15 VDSS ID25 RDS(on) = 150 V = 180 A = 10 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum ratings 150 150 ±20 ±30 180 75 720 90 64 3.0 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g G D S TO-264 AA (IXTK) D (TAB) G = Gate S = Source D = Drain Tab = Drain Features 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10 Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 250 µA V GS = ±20 V DC, VDS = 0 V DS = VDSS V GS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±200 V V nA Motor controls DC choppers Switched-mode power supplies Advantages 50 µA 3 mA 10 m Ω Easy to mount with one screw (isolated mounting screw hole) Space savings High power density V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 30...