BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev. 01 — 30 August 2007
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Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 175 °C...