PBSS5540X

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jan 15 2004 Nov 04 Philips Semiconductors www.DataSheet4U.com Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation. APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Medium power driver (e.g. relays, buzzers and motors). 1 DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. MARKING 2 3 PINNING PIN emitter collector base RCEsat QUICK REFERENCE DATA SYMBOL VCEO IC ICRP PARAMETER collector current (DC) PBSS5540X MAX. −4 −5 75 UNIT V A A mΩ collector-emitter voltage −40 repetitive peak collector current equivalent on-resistance DESCRIPTION 2 TYPE NUMBER PBSS5540X Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE(1) *1G 3 1 sym079 3 2 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5540X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Nov 04 2 Philips Semiconductors www.DataSheet4U.com Product specification 40 V, 5 A PNP low VC...