DISCRETE SEMICONDUCTORS
www.DataSheet4U.com
DATA SHEET
book, halfpage
M3D109
PBSS5540X 40 V, 5 A PNP low VCEsat (BIS...
DISCRETE SEMICONDUCTORS
www.DataSheet4U.com
DATA SHEET
book, halfpage
M3D109
PBSS5540X 40 V, 5 A
PNP low VCEsat (BISS)
transistor
Product specification Supersedes data of 2004 Jan 15 2004 Nov 04
Philips Semiconductors
www.DataSheet4U.com Product specification
40 V, 5 A
PNP low VCEsat (BISS)
transistor
FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation. APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Medium power driver (e.g. relays, buzzers and motors). 1 DESCRIPTION
PNP low VCEsat
transistor in a medium power SOT89 (SC-62) package.
NPN complement: PBSS4540X. MARKING 2 3 PINNING PIN emitter collector base RCEsat QUICK REFERENCE DATA SYMBOL VCEO IC ICRP PARAMETER collector current (DC)
PBSS5540X
MAX. −4 −5 75
UNIT V A A mΩ
collector-emitter voltage −40 repetitive peak collector current equivalent on-resistance
DESCRIPTION
2
TYPE NUMBER PBSS5540X Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.
MARKING CODE(1) *1G
3 1
sym079
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5540X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89
2004 Nov 04
2
Philips Semiconductors
www.DataSheet4U.com Product specification
40 V, 5 A
PNP low VC...