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APT11GF120BRDQ1 Dataheets PDF



Part Number APT11GF120BRDQ1
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description FAST IGBT and FRED
Datasheet APT11GF120BRDQ1 DatasheetAPT11GF120BRDQ1 Datasheet (PDF)

TYPICAL PERFORMANCE CURVES ® APT11GF120BRDQ1 www.DataSheet4U.com APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. APT11GF120BRDQ1(G) 1200V FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • RBSOA and SCSOA Rated • High Freq. Switching to.

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TYPICAL PERFORMANCE CURVES ® APT11GF120BRDQ1 www.DataSheet4U.com APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. APT11GF120BRDQ1(G) 1200V FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • RBSOA and SCSOA Rated • High Freq. Switching to 20KHz • Ultra Low Leakage Current G TO -2 47 C E • Ultrafast Soft Recovery Anti-parallel Diode C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT11GF120BRDQ1(G) UNIT Volts 1200 ±30 25 14 24 24A @ 1200V 156 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 5.5 2.5 3.1 2 2 6.5 3.0 500 3000 ±100 Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES µA nA 12-2005 052-6212 Rev A Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT11GF120BRDQ1(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 8A TJ = 150°C, R G = 10Ω, VGE = Inductive Switching (25°C) VCC = 800V VGE = 15V RG = 10Ω I C = 8A VGE = 15V MIN TYP www.DataSheet4U.com MAX UNIT pF V nC 620 90 40 10.0 65 10 35 44 7 5 100 55 300 485 285 7 5 115 46 295 915 325 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 1200V Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V RG = 10Ω I C = 8A µJ Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .80 1.18 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 12-2005 Rev A 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6212 TYPICAL PERFORMANCE CURVES 30 25 TJ = 25°C 20 15 10 5 0 TJ = 125°C V GE = 15V 40 35 IC, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 APT11GF120BRDQ1(G) 15V www.DataSheet4U.com 14V 13V 12V TJ = -55°C IC, COLLECTOR CURRENT (A) 11V 10V 9V 8V 30 25 20 15 10 FIGURE 1, Output Characteristics(TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125°C) I = 8A C T = 25°C J 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE = 240V VCE = 600V IC, COLLECTOR CURRENT (A) TJ = -55°C 8 6 4 2 0 0 10 VCE = 960V TJ = 25°C 5 0 TJ = 125°C 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 20 30 40 50 60 GATE CHARGE (nC) FIGURE 4, Gate Charge 70 80 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 4 .


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