NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER M...
NEC's
NPN SiGe RF
TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 3.6 V, IC = 100 mA, f = 460 MHz SiGe TECHNOLOGY: UHS2-HV process ABSOLUTE MAXIMUM RATINGS: VCBO = 20 V 3-PIN POWER MINIMOLD (34 PACKAGE)
ORDERING INFORMATION
PART NUMBER NESG250134-AZ NESG250134-T1-AZ ORDER NUMBER NESG250134-AZ NESG250134-T1-AZ PACKAGE 3-pin power minimold (Pb-Free) Note1 QUANTITY 25 pcs (Non reel) 1 kpcs/reel SUPPLYING FORM 12 mm wide embossed taping Pin 2 (Emitter) face the perforation side of the tape
Note 1. Contains lead in the part except the electrode terminals. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 20 9.2 2.8 500 1.5 150 −65 to +150 UNIT V V V mA W °C °C
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
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