NESG210833

DATA SHEET www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz SiGe HBT technology (UHS2) : fT = 15.5 GHz 3-pin minimold (33 PKG) ORDERING INFORMATION Part Number NESG210833 Order Number NESG210833-A Package 3-pin minimold (33 PKG) (Pb-Free) NESG210833-T1B NESG210833-T1B-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Base Current Note 1 Symbol VCBO VCES VCEO IB IC Ptot Note 2 Ratings 5.5 13 5.5 36 100 480 150 −65 to +150 Unit V V V mA mA mW °C °C Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tj Tstg Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (...