NESG2107M33

PRELIMINARY DATA SHEET www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NESG2107M33-A NESG2107M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note RATINGS 13.0 5.0 1.5 100 130 150 −65 to +150 UNIT V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG2107M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Noise Figure Associated Gain Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Cre Note 2 NF Ga fT fT |S21e| 2 www.DataSheet4U.com MIN. TYP. MAX. UNIT SYMBOL TEST COND...