2SD2504

Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification www.DataSheet4U.com Unit: mm 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 Low collector-emitter saturation voltage VCE(sat) Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature Note) *: t = 380 µs Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 15 10 10 5 9 750 150 −55 to +150 Unit V V V A A mW °C °C 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 –0.1 2.5+0.6 –0.2 ■ Features 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 1 mA, IE = 0 IC = 10 µA, IB = 0 VCB = 10 V, IE = 0 VCE = 5 V, IB = 0 VEB = 5 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE = 0, f =...