N-Channel 60-V (D-S) Fast Switching MOSFET
Si7460DP
Vishay Siliconix
www.DataSheet4U.com
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
60
FE...
Description
Si7460DP
Vishay Siliconix
www.DataSheet4U.com
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)
18 16
rDS(on) (W)
0.0096 @ VGS = 10 V 0.012 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive 12/24-V Battery - ABS - ECU - Motor Drives
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7460DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
60 "20 18 14 40 4.3 50 125 5.4 3.4
Steady State
Unit
V
11 8 A 1.6
mJ 1.9 1.2 W _C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72126 S-03416—Rev. A, 03-Mar-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 52 1.0
Maximum
23 65 1.3
Unit
_C/W
1
Si7460DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage...
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