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PBSS5130T Dataheets PDF



Part Number PBSS5130T
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description PNP Transistor
Datasheet PBSS5130T DatasheetPBSS5130T Datasheet (PDF)

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective al.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 12 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETS in specific applications. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage PBSS5130T QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −30 −1 −1.5 220 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. Top view 2 1 2 MAM256 MARKING TYPE NUMBER PBSS5130T Note 1. * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China. MARKING CODE(1) *3E Fig.1 Simplified outline (SOT23) and symbol. 2003 Dec 12 2 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5130T − DESCRIPTION plastic surface mounted package; 3 leads PBSS5130T VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C note 1 note 2 Tstg Tj Tamb Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on an FR4 printed-circuit board, single sided-copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2. CONDITIONS in free air 417 260 K/W K/W VALUE UNIT storage temperature junction temperature operating ambient temperature − − −65 − −65 300 480 +150 150 +150 mW mW °C °C °C CONDITIONS open emitter open base open collector − − − − − − MIN. MAX. −30 −30 −5 −1 −3 −300 V V V A A mA UNIT 2003 Dec 12 3 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = −30 V; IE = 0 VCB = −30 V; IE = 0; Tj = 150 °C VEB = −4 V; IC = 0 VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCE = −2 V; IC = −1 A VCEsat RCEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance IC = −100 mA; IB = −1 mA IC = −1 A; IB = −50 mA IC = −500 mA; IB = −50 mA; note 1 VCE = −2 V; IC = −100 mA IC = −100 mA; VCE = −10 V; f = 100 MHz VCB = −10 V; IE = Ie = 0; f = 1 MHz MIN. − − − 300 260 210 − − − − 100 − PBSS5130T TYP. − − − 450 350 290 − − − − 200 − MAX. −100 −50 −100 − − − −100 −225 220 −0.75 − 28 UNIT nA µA nA mV mV mΩ V MHz pF 2003 Dec 12 4 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PBSS5130T SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Dec 12 5 Philips Semiconductors www.DataSheet4U.com Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS5130T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specifi.


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