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DIM2400ESS12-A000 Dataheets PDF



Part Number DIM2400ESS12-A000
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Single Switch IGBT Module
Datasheet DIM2400ESS12-A000 DatasheetDIM2400ESS12-A000 Datasheet (PDF)

DIM2400ESS12-A000 Single Switch IGBT Module DS5840-1.1 June 2005 (LN24075) FEATURES • • • • 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base plate KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 1200V 2.2V 2400A 4800A Lead Free construction (measured at the power busbars and not the auxiliary terminals) APPLICATIONS • • High Power Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi.

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DIM2400ESS12-A000 Single Switch IGBT Module DS5840-1.1 June 2005 (LN24075) FEATURES • • • • 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base plate KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 1200V 2.2V 2400A 4800A Lead Free construction (measured at the power busbars and not the auxiliary terminals) APPLICATIONS • • High Power Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM2400ESS12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Single switch circuit diagram ORDERING INFORMATION Order As: DIM2400ESS12-A000 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Package www.DataSheet4U.com Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1 /9 www.dynexsemi.com DIM2400ESS12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol 2 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value (IGBT arm) Isolation voltage – per module 2 Test Conditions VGE = 0V Max. 1200 ±20 Units V V A A kW kA S V 2 Tcase = 85° C 1ms, Tcase =115° C Tcase = 25° C, T j = 150° C VR = 0, tP = 10ms, Tvj = 125° C Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2400 4800 20830 900 2500 www.DataSheet4U.com Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 2 /9 www.dynexsemi.com DIM2400ESS12-A000 SEMICONDUCTOR THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Al2O3 Copper 32mm 20mm 175 Symbol Parameter Test Conditions Min. Typ. Max. Units Rth(j-c) Thermal resistance – transistor Continuous dissipation – junction to case Continuous dissipation – junction to case - - 6 ° C/kW Rth(j-c) Thermal resistance – diode - - 13.3 ° C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Transistor Diode - - 6 ° C/kW Tj Junction temperature -40 - - 150 125 125 5 2 10 °C °C °C Nm Nm Nm Tstg - Storage temperature range Screw torque Mounting – M6 Electrical connections – M4 Electrical connections – M8 www.DataSheet4U.com Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3 /9 www.dynexsemi.com DIM2400ESS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol Ices Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125° C Min. 4.5 - Typ. 5.5 2.2 2.6 Max. 3 75 12 6.5 2.8 3.3 2400 4800 Units mA mA µA V V V A A V V nF nH mΩ A A Ices VGE(TH) VCE(sat)   Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 80mA, VGE = VCE VGE = 15V, IC = 2400A VGE = 15V, IC = 2400A, Tcase = 125° C IF IFM VF   Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 2400A IF = 2400A, Tcase = 125° C 2.1 2.1 270 2.4 2.4 - Cies LM RINT SCData Input capacitance Module inductance Internal resistance Short circuit. Isc VCE = 25V, VGE = 0V, f = 1MHz Tj = 125° C, Vcc = 2500V, tp ≤ 10µs, VCE(max) = VCES - L*.di/dt IEC 60747-9 I1 I2 - 10 0.09 16500 13500 Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM ¡ www.DataSheet4U.com Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 4 /9 www.dynexsemi.com DIM2400ESS12-A000 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 2400A, V.


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