Document
DIM2400ESS12-A000
Single Switch IGBT Module
DS5840-1.1 June 2005 (LN24075)
FEATURES
• • • • 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base plate
KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max)
*
1200V 2.2V 2400A 4800A
Lead Free construction
(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
• • High Power Inverters Motor Controllers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM2400ESS12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As: DIM2400ESS12-A000
Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information)
Fig. 2 Package
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM2400ESS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise
Symbol VCES VGES IC IC(PK) Pmax It Visol
2
Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value (IGBT arm) Isolation voltage – per module
2
Test Conditions VGE = 0V
Max. 1200 ±20
Units V V A A kW kA S V
2
Tcase = 85° C 1ms, Tcase =115° C Tcase = 25° C, T j = 150° C VR = 0, tP = 10ms, Tvj = 125° C Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2400 4800 20830 900 2500
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DIM2400ESS12-A000
SEMICONDUCTOR
THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Al2O3 Copper 32mm 20mm 175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
Thermal resistance – transistor
Continuous dissipation – junction to case Continuous dissipation – junction to case
-
-
6
° C/kW
Rth(j-c)
Thermal resistance – diode
-
-
13.3
° C/kW
Rth(c-h)
Thermal resistance – case to heatsink (per module)
Mounting torque 5Nm (with mounting grease) Transistor Diode
-
-
6
° C/kW
Tj
Junction temperature
-40 -
-
150 125 125 5 2 10
°C °C °C Nm Nm Nm
Tstg -
Storage temperature range Screw torque
Mounting – M6 Electrical connections – M4 Electrical connections – M8
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DIM2400ESS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise.
Symbol Ices
Parameter Collector cut-off current
Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125° C
Min. 4.5 -
Typ. 5.5 2.2 2.6
Max. 3 75 12 6.5 2.8 3.3 2400 4800
Units mA mA µA V V V A A V V nF nH mΩ A A
Ices VGE(TH) VCE(sat)
Gate leakage current Gate threshold voltage Collector-emitter saturation voltage
VGE = ±20V, VCE = 0V IC = 80mA, VGE = VCE VGE = 15V, IC = 2400A VGE = 15V, IC = 2400A, Tcase = 125° C
IF IFM VF
Diode forward current Diode maximum forward current Diode forward voltage
DC tp = 1ms IF = 2400A IF = 2400A, Tcase = 125° C
2.1 2.1 270
2.4 2.4 -
Cies LM RINT SCData
Input capacitance Module inductance Internal resistance Short circuit. Isc
VCE = 25V, VGE = 0V, f = 1MHz Tj = 125° C, Vcc = 2500V, tp ≤ 10µs, VCE(max) = VCES - L*.di/dt IEC 60747-9 I1 I2 -
10 0.09 16500 13500
Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM
¡
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DIM2400ESS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS Tcase = 25° C unless stated otherwise.
Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 2400A, V.