Single Switch IGBT Module
DS5840-1.1 June 2005 (LN24075)
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Base plate
• Lead Free construction
• High Power Inverters
• Motor Controllers
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM2400ESS12-A000 is a single switch 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
Note: When ordering, please use the whole part number.
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.