IXFR44N50Q

www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 mΩ 500 V 40 A 110 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q 34 40 176 192 44 48 60 2.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 IXYS advanced low Qg process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic diode Applications l DC-DC converters l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 V 4.0 V ±100 nA TJ = 125°C 44N50Q 48N50Q 100 µA 2 mA 120 mΩ 110 mΩ Battery chargers Switched-mode and res...