PHD16N03LT

PHD16N03LT N-channel TrenchMOS™ logic level FET Rev. 01 — 08 March 2004 M3D300 www.DataSheet4U.com Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Fast switching. 1.3 Applications s DC-to-DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 32.6 W s ID ≤ 16 A s RDSon ≤ 67 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 Top view 3 MBK091 Simplified outline [1] Symbol d mb g s MBB076 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors PHD16N03LT www.DataSheet4U.com N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name PHD16N03LT D-PAK Description Version Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C pe...